Welcome to Samsung’s Memory Tech Day 2023, a celebration of groundbreaking memory innovations. These cutting-edge technologies promise to redefine AI, gaming, and data center applications. In this article, we’ll take a closer look at each innovation and their potential to transform our digital world.
Samsung HBM3E “Shinebolt” Memory
Samsung is a pioneer in memory technology, and with the introduction of HBM3E, codenamed “Shinebolt,” they are pushing the boundaries even further. Shinebolt is a memory marvel designed to power next-generation AI applications.
HBM3E boasts an incredible speed of 9.8 gigabits-per-second (Gbps) per pin, achieving transfer rates exceeding 1.2 terabytes-per-second (TBps). This monumental leap in performance is made possible by optimizing the non-conductive film (NCF) technology, reducing gaps between chip layers, and maximizing thermal conductivity.
Table 1: HBM Memory Specifications Comparison
| DRAM | HBM1 | HBM2 | HBM2E | HBM3 | HBM3 GEN2 | HBMNEXT (HBM4) |
|---|---|---|---|---|---|---|
| I/O (Bus Interface) | 1024 | 1024 | 1024 | 1024 | 1024-2048 | 1024-2048 |
| Prefetch (I/O) | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum Bandwidth | 128 GB/s | 256 GB/s | 460.8 GB/s | 819.2 GB/s | 1.2 TB/s | 1.5 – 2.0 TB/s |
| DRAM ICs Per Stack | 4 | 8 | 8 | 12 | 8-12 | 8-12 |
| Maximum Capacity | 4 GB | 8 GB | 16 GB | 24 GB | 24 – 36 GB | 36-64 GB |
| tRC | 48ns | 45ns | 45ns | TBA | TBA | TBA |
| tCCD | 2ns (=1tCK) | 2ns (=1tCK) | 2ns (=1tCK) | TBA | TBA | TBA |
| VPP | External VPP | External VPP | External VPP | External VPP | TBA | – |
| VDD | 1.2V | 1.2V | 1.2V | TBA | TBA | – |
| Command Input | Dual Command | Dual Command | Dual Command | Dual Command | Dual Command | Dual Command |
Samsung GDDR7 – Revolutionizing Gaming
For gaming and tech enthusiasts, Samsung’s introduction of 32 Gbps GDDR7 is nothing short of revolutionary. This memory isn’t just about speed; it’s about transforming the gaming experience.
Table 2: GDDR Graphics Memory Evolution
| GRAPHICS MEMORY | GDDR5X | GDDR6 | GDDR6X | GDDR7 |
|---|---|---|---|---|
| Workload | Gaming | Gaming / AI | Gaming / AI | Gaming / AI |
| Platform (Example) | GeForce GTX 1080 Ti | GeForce RTX 2080 Ti | GeForce RTX 4090 | GeForce RTX 5090? |
| Number of Placements | 12 | 12 | 12 | 12? |
| Gb/s/pin | 11.4 | 14-16 | 19-24 | 32-36 |
| GB/s/placement | 45 | 56-64 | 76-96 | 128-144 |
| GB/s/system | 547 | 672-768 | 912-1152 | 1536-1728 |
| Configuration (Example) | 384 IO (12pcs x 32 IO package) | 384 IO (12pcs x 32 IO package) | 384 IO (12pcs x 32 IO package) | 384 IO (12pcs x 32 IO package)? |
| Frame Buffer of Typical System | 12GB | 12GB | 24 GB | 24 GB? |
| Average Device Power (pJ/bit) | 8.0 | 7.5 | 7.25 | TBD |
| Typical IO Channel | PCB (P2P SM) | PCB (P2P SM) | PCB (P2P SM) | PCB (P2P SM) |
Samsung LPDDR5x – Redefining Mobile Designs
In an era of data-intensive tasks, Samsung introduces a range of memory solutions that cater to high-performance, high-capacity, low-power, and small form factors at the edge.
Table 3: Samsung’s LPDDR5x Specifications
| LPDDR5x Module | Speed (Gbps) | Capacity | Use Cases |
|---|---|---|---|
| 7.5Gbps LPDDR5X CAMM2 | 7.5 | Various | Next-gen PC and laptop DRAM market |
| 9.6Gbps LPDDR5X DRAM | 9.6 | Various | On-device AI and high-performance |
GPU Memory Technology Evolution
The evolution of GPU memory technology has played a crucial role in shaping our digital world. Samsung’s contributions, such as HBM3/E and GDDR7, are milestones in the journey.
Table 4: GPU Memory Technology Evolution
| Graphics Card Name | Memory Technology | Memory Speed (Gbps) | Memory Bus | Memory Bandwidth (GB/s) | Release Year |
|---|---|---|---|---|---|
| AMD Radeon R9 Fury X | HBM1 | 1.0 | 4096-bit | 512 | 2015 |
| NVIDIA GTX 1080 | GDDR5X | 10.0 | 256-bit | 320 | 2016 |
| NVIDIA Tesla P100 | HBM2 | 1.4 | 4096-bit | 720 | 2016 |
| NVIDIA Titan Xp | GDDR5X | 11.4 | 384-bit | 547 | 2017 |
| AMD RX Vega 64 | HBM2 | 1.9 | 2048-bit | 483 | 2017 |
| NVIDIA Titan V | HBM2 | 1.7 | 3072-bit | 652 | 2017 |
| NVIDIA Tesla V100 | HBM2 | 1.7 | 4096-bit | 901 | 2017 |
| NVIDIA RTX 2080 Ti | GDDR6 | 14.0 | 384-bit | 672 | 2018 |
| AMD Instinct MI100 | HBM2 | 2.4 | 4096-bit | 1229 | 2020 |
| NVIDIA A100 80 GB | HBM2e | 3.2 | 5120-bit | 2039 | 2020 |
| NVIDIA RTX 3090 | GDDR6X | 19.5 | 384-bit | 936.2 | 2020 |
| AMD Instinct MI200 | HBM2e | 3.2 | 8192-bit | 3200 | 2021 |
| NVIDIA RTX 3090 Ti | GDDR6X | 21.0 | 384-bit | 1008 | 2022 |
| NVIDIA H100 80 GB | HBM3/E | 2.6 | 5120-bit | 1681 | 2022 |
In conclusion, Samsung’s Memory Tech Day 2023 is a testament to human ingenuity and innovation. These memory innovations not only enhance performance but also pave the way for a future where AI, gaming, and data centers will reach unprecedented levels of efficiency and power.